byx82, byx83, byx84, byx85, byx86 www.vishay.com vishay semiconductors rev. 1.7, 11-sep-12 1 document number: 86052 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard avalanche sinterglass diode mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? low reverse current ? high surge current loading ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? rectification, general purpose ? ? ? ? ? ? ? 949539 ordering information (example) device name ordering code tape d units minimum order quantity byx86 byx86tr 5000 per 10" tape and reel 25 000 byx86 byx86tap 5000 per ammopack 25 000 parts table part type differentiation package byx82 v r = 200 v; i f(av) = 2 a sod-57 byx83 v r = 400 v; i f(av) = 2 a sod-57 byx84 v r = 600 v; i f(av) = 2 a sod-57 byx85 v r = 800 v; i f(av) = 2 a sod-57 byx86 v r = 1000 v; i f(av) = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byx82 v r = v rrm 200 v byx83 v r = v rrm 400 v byx84 v r = v rrm 600 v byx85 v r = v rrm 800 v byx86 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a repetitive peak forward current i frm 10 a average forward current t amb ? 45 c i f(av) 2a i 2 t-rating i 2 t8a 2 s junction and storage temperature range t j = t stg - 55 to + 175 c
byx82, byx83, byx84, byx85, byx86 www.vishay.com vishay semiconductors rev. 1.7, 11-sep-12 2 document number: 86052 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - junction temperature vs. reverse/repetitive peak reverse voltage fig. 3 - forward current vs. forward voltage fig. 4 - typ. diode capacitance vs. reverse voltage maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 a v f -0.91 v reverse current v r = v rrm i r -0.11a v r = v rrm , t j = 100 c i r -1025a diode capacitance v r = 4 v, f = 1 mhz c d -20-pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr -24s reverse recovery charge i f = i r = 1 a, di/dt = 5 a/s q rr -36c 0 0 20 40 60 80 120 r ?therm. resist. junction/ ambient ( k/w) thja l ? lead length ( mm ) 94 9572 51015 25 30 20 100 ll t l = constant 0 400 800 1200 0 t ? junction temperature ( c ) j reverse / repetitive peak reverse voltag e(v) 1600 94 9579 40 80 120 160 240 200 byx 85 byx 86 byx 84 byx 82 byx 83 v r v rrm r thja 35 k/w r thja 57 k/w r thja 100 k/w 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 3.0 94 9573 i ? forward current (a ) f v f ? forward voltag e(v) scattering limits t j =25c t j = 175c 0 6 12 18 24 30 0.1 1 10 c ? diode capacitance ( pf ) d v r ? reverse voltag e(v) 100 94 9574 f = 1 mhz t j =25c
byx82, byx83, byx84, byx85, byx86 www.vishay.com vishay semiconductors rev. 1.7, 11-sep-12 3 document number: 86052 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - thermal response fig. 6 - thermal response fig. 7 - thermal response 1 10 100 1000 z ?thermal resistance for pulsecond.(k/w) thp t p ? pulse lengt h(s) 94 9575 10 ?3 10 ?2 10 ?1 10 0 10 1 10 0 10 1 10 2 i frm ? repetitive peak forward current ( a ) t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 0.02 0.01 t amb =25c t amb =45 c t amb =70c t amb =100 c single pulse t amb = 125 c t amb = 150 c v rrm 200 v r thja 100 k/w 1 10 100 1000 z ? thermal resistance for pulsecond.(k/w) thp t p ? pulse lengt h(s) 94 9578 i frm ? repetitive peak forward current ( a ) 10 ?3 10 ?2 10 ?1 10 0 10 1 10 ?1 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 0.02 0.01 t amb =25c t amb =45c t amb =60c t amb =100c single pulse v rrm 1000 v t10 r thja 100 k/w t amb =70c s 1 10 100 1000 z ? thermal resistance for pulse cond.(k/w) thp t p ? pulse lengt h(s) 94 9577 i frm ? repetitive peak forward current ( a ) 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 t amb =25c t amb =45c t amb =70c t amb = 100c single pulse t amb = 125c t amb = 150c v rrm 200 v r thja 57 k/w
byx82, byx83, byx84, byx85, byx86 www.vishay.com vishay semiconductors rev. 1.7, 11-sep-12 4 document number: 86052 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - thermal response package dimensions in millimeters (inches): sod-57 1 10 100 1000 z ?thermal resistance for pulse cond.(k/w) thp t p ? pulse lengt h(s) 94 9576 i frm ? repetitive peak forward current ( a ) 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 0 10 1 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 t amb =25c t amb =45c 70c 100c single pulse t amb = 125c v rrm 1000 v t10 s r thja 57 k/w 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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